Isotope effect on the lifetime of the 2 p 0 state in phosphorus - doped silicon

H.-W. Hübers,1,2,* S. G. Pavlov,1 S. A. Lynch,3 Th. Greenland,4 K. L. Litvinenko,5 B. Murdin,5 B. Redlich,6 A. F. G. van der Meer,6 H. Riemann,7 N. V. Abrosimov,7 P. Becker,8 H.-J. Pohl,9 R. Kh. Zhukavin,10 and V. N. Shastin10 1Institute of Planetary Research, German Aerospace Center (DLR), Rutherfordstrasse 2, 12489 Berlin, Germany 2Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17 Juni 135, 10623 Berlin, Germany 3School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, United Kingdom 4London Centre for Nanotechnology, University College London, 17–19 Gordon Street, London WC1H 0AH, United Kingdom 5Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, United Kingdom 6Institute for Molecules and Materials, Radboud University Nijmegen, Heyendaalseweg 135, 6500 GL Nijmegen, the Netherlands 7Leibniz Institute of Crystal Growth, Max-Born-Straße 2, 12489 Berlin, Germany 8Physikalisch Technische Bundesanstalt, 38116 Braunschweig, Germany 9VITCON Projectconsult GmbH, 07743 Jena, Germany 10Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, Russia (Received 22 April 2013; revised manuscript received 5 June 2013; published 2 July 2013)